SSM3K7002BF(T5L,F)

Снят с производства
SSM3K7002BF(T5L,F) - Toshiba
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Краткое описание: N-CH MOSFET, 60V, 0.2A, S-Mini, Surface Mount
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel Silicon MOSFET for small signal applications. Features a 60V drain-source voltage, 0.2A continuous drain current, and ±20V gate-source voltage. Housed in a 3-pin S-Mini surface-mount package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Utilizes U-MOS IV process technology with a maximum drain-source resistance of 2100 mOhm at 10V. Operates across a temperature range of -55°C to 150°C.
PCB 3
ECCN EAR99
PPAP No
EU RoHS Yes
Category Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 3
Automotive No
Lead Shape Gull-wing
Schedule B 8541210080
Channel Mode Enhancement
Channel Type N
Package/Case S-Mini
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Pin Pitch (mm) 0.95
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Weight (g) 0.012
Package Width (mm) 1.5
Process Technology U-MOS IV
Package Family Name S-MINI
Package Height (mm) 1.1
Package Length (mm) 2.9
Seated Plane Height (mm) 1.15
Max Operating Temperature 150°C
Maximum Power Dissipation 200mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 60V
Maximum Gate Threshold Voltage 3.1V
Maximum Drain Source Resistance 2100@10VmOhm
Typical Input Capacitance @ Vds 17@25VpF
Maximum Continuous Drain Current 0.2A

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