SSM5N03FE(BRA,F)

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SSM5N03FE(BRA,F) - Toshiba
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Краткое описание: N-CH MOSFET 20V 0.1A 5-Pin SMT ESV Dual Common Source
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel enhancement mode silicon MOSFET, dual common source configuration. Features a maximum drain-source voltage of 20V and a continuous drain current of 0.1A. Surface mountable in a 5-pin ESV package with flat lead shape, measuring 1.6mm x 1.2mm x 0.55mm. Operates within a temperature range of -55°C to 150°C.
PCB 5
ECCN EAR99
PPAP No
EU RoHS Yes
Category Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 5
Automotive No
Lead Shape Flat
Schedule B 8541210080
Channel Mode Enhancement
Channel Type N
Package/Case ESV
AEC Qualified No
Configuration Dual Common Source
RoHS Versions 2002/95/EC
Pin Pitch (mm) 0.5
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 1.2
Package Family Name SOT
Package Height (mm) 0.55
Package Length (mm) 1.6
Radiation Hardening No
Seated Plane Height (mm) 0.55
Max Operating Temperature 150°C
Maximum Power Dissipation 150mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage 10V
Number of Elements per Chip 2
Maximum Drain Source Voltage 20V
Maximum Drain Source Resistance [email protected]mOhm
Typical Input Capacitance @ Vds 11@3VpF
Maximum Continuous Drain Current 0.1A

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