SSM5N15FE(TPL3)

Снят с производства
SSM5N15FE(TPL3) - Toshiba
Увеличить
Краткое описание: N-CH MOSFET 30V 0.1A 5-Pin SMT ESV Dual Common Source
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel enhancement mode MOSFET, 30V drain-source voltage, 0.1A continuous drain current. Features dual common source configuration in a 5-pin ESV SOT package with flat leads for surface mounting. This small signal transistor offers a maximum drain-source resistance of 4000 mOhm at 4V and a typical input capacitance of 7.8pF at 3V. Operating temperature range from -55°C to 150°C.
PCB 5
ECCN EAR99
PPAP No
EU RoHS Yes
Category Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 5
Automotive No
Lead Shape Flat
Schedule B 8541210080
Channel Mode Enhancement
Channel Type N
Package/Case ESV
AEC Qualified No
Configuration Dual Common Source
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 0.5
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 1.2
Package Family Name SOT
Package Height (mm) 0.55
Package Length (mm) 1.6
Radiation Hardening No
Seated Plane Height (mm) 0.55
Max Operating Temperature 150°C
Maximum Power Dissipation 150mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 2
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 4000@4VmOhm
Typical Input Capacitance @ Vds 7.8@3VpF
Maximum Continuous Drain Current 0.1A

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.