SSM6E01TU(BRA)
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Краткое описание:
Dual N/P-CH MOSFET, 20V/12V, 0.05A/1A, 6-Pin UF, SMT
Дополнительная информация
Dual N/P-channel enhancement mode silicon power MOSFET in a 6-pin UF surface mount package. Features flat leads, 0.65mm pin pitch, and compact dimensions (2mm x 1.7mm x 0.7mm). Offers 20V/0.05A for N-channel and 12V/1A for P-channel, with maximum drain source resistance of 10000mΩ (N-ch) and 160mΩ (P-ch). Operates within a temperature range of -55°C to 150°C.
| PCB | 6 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | No |
| Category | Power MOSFET |
| HTS Code | 8541210095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Flat |
| Schedule B | 8541210080 |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Package/Case | UF |
| AEC Qualified | No |
| Configuration | Dual |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Package Weight (g) | 0.007 |
| Package Width (mm) | 1.7 |
| Package Height (mm) | 0.7 |
| Package Length (mm) | 2 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 0.7 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 500mW |
| Min Operating Temperature | -55°C |
| Maximum Gate Source Voltage | 10@N Channel|±12@P ChannelV |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20@N Channel|12@P ChannelV |
| Maximum Drain Source Resistance | [email protected]@N Channel|160@4V@P ChannelmOhm |
| Typical Input Capacitance @ Vds | 11@3V@N Channel|310@10V@P ChannelpF |
| Maximum Continuous Drain Current | 0.05@N Channel|1@P ChannelA |
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