SSM6L09FU(BRA)

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SSM6L09FU(BRA) - Toshiba
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Краткое описание: Dual N/P-CH MOSFET Si 30V 0.4A/0.2A SOT-363 6-Pin SM
Производитель Toshiba
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

Dual N/P-channel enhancement mode MOSFETs for surface mount applications. Features 30V drain-source voltage and 0.4A/0.2A continuous drain current for N/P channels respectively. Housed in a compact 6-pin US package (SOT-363) with dimensions of 2mm x 1.25mm x 0.9mm. Operates across a wide temperature range of -55°C to 150°C.
PCB 6
ECCN EAR99
PPAP No
Jedec SOT-363
EU RoHS Yes
Category Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 6
Automotive No
Schedule B 8541210080
Channel Mode Enhancement
Channel Type N|P
Package/Case US
AEC Qualified No
Configuration Dual
RoHS Versions 2011/65/EU, 2015/863
Package Weight (g) 0.0068
Package Width (mm) 1.25
Package Height (mm) 0.9
Package Length (mm) 2
Radiation Hardening No
Seated Plane Height (mm) 1.1(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 300mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 2
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 700@10V@N Channel|2700@10V@P ChannelmOhm
Typical Input Capacitance @ Vds 20@5V@N Channel|22@5V@P ChannelpF
Maximum Continuous Drain Current 0.4@N Channel|0.2@P ChannelA

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