SSM6N04FU(TE85L,F)
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Краткое описание:
N-CH MOSFET, 20V, 0.1A, Dual, Si, SOT-363, 6-Pin, SM
Дополнительная информация
N-channel silicon enhancement mode MOSFET, dual configuration, designed for small signal applications. Features a maximum drain-source voltage of 20V and a continuous drain current of 0.1A. Housed in a compact 6-pin US package (SOT-363) with surface mount capability, measuring 2mm x 1.25mm x 0.9mm. Operates across a wide temperature range from -55°C to 150°C.
| PCB | 6 |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | SOT-363 |
| EU RoHS | Yes |
| Category | Small Signal |
| HTS Code | 8541210095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 6 |
| Automotive | No |
| Schedule B | 8541210080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | US |
| AEC Qualified | No |
| Configuration | Dual |
| RoHS Versions | 2002/95/EC |
| Package Weight (g) | 0.0068 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Package Length (mm) | 2 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.1(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 200mW |
| Min Operating Temperature | -55°C |
| Maximum Gate Source Voltage | 10V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Input Capacitance @ Vds | 11@3VpF |
| Maximum Continuous Drain Current | 0.1A |
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