SSVBC846BPDW1T1G
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NPN/PNP BJT, 65V, 100mA, 250mW, SOT-363
Дополнительная информация
The SSVBC846BPDW1T1G is a bipolar junction transistor from Onsemi with a maximum collector-emitter voltage of 65V and a maximum collector current of 100mA. It has a maximum power dissipation of 250mW and is packaged in a surface mount SOT-363 package. The transistor operates over a temperature range of -55°C to 150°C and has a gain bandwidth product of 100MHz. It is available in quantities of 3000 units per reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 200 |
| Polarity | NPN, PNP |
| Packaging | Tape and Reel |
| Package/Case | SOT-363 |
| Package Quantity | 3000 |
| Max Collector Current | 100mA |
| Max Power Dissipation | 250mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 65V |
| Collector Emitter Saturation Voltage | 250mV |
