ST2310DHI

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ST2310DHI - Stmicroelectronics
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Краткое описание: NPN BJT 600V 12A 55W Through Hole SOT-93-3
Производитель Stmicroelectronics
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

The ST2310DHI is a high-power NPN bipolar junction transistor with a collector-emitter breakdown voltage of 600V and a continuous collector current rating of 12A. It is packaged in a SOT-93-3 package and is designed for through-hole mounting. The transistor has a maximum operating temperature range of -65°C to 150°C and a maximum power dissipation of 55W. The device is lead-free and RoHS compliant.
RoHS Compliant
Mount Through Hole
hFE Min 5.5
Polarity NPN
Lead Free Lead Free
Packaging Rail/Tube
Package/Case SOT-93-3
Current Rating 12A
RoHS Compliant Yes
DC Rated Voltage 600V
Package Quantity 300
Power Dissipation 55W
Max Collector Current 12A
Max Power Dissipation 55W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 7V
Continuous Collector Current 12A
Collector Base Voltage (VCBO) 1.5kV
Collector-emitter Voltage-Max 3V
Collector Emitter Breakdown Voltage 600V

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