STB100N10F7
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Краткое описание:
N-Ch MOSFET 100V 80A 8mR D2PAK
Дополнительная информация
N-channel power MOSFET featuring 100V drain-source breakdown voltage and 80A continuous drain current. Offers low 8mΩ typical drain-to-source resistance and 150W maximum power dissipation. Designed for surface mounting in a TO-263-3 (D2PAK) package, operating from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 27ns and fall time of 15ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | DeepGATE™, STripFET™ VII |
| Weight | 0.139332oz |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8mR |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 4.369nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 27ns |
| Turn-Off Delay Time | 46ns |
| Max Power Dissipation | 150W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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