STB100NF03L-03T4
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Краткое описание:
N-CH 30V 100A 3.2mR Power MOSFET D2PAK
Дополнительная информация
N-channel Power MOSFET featuring 30V drain-source breakdown voltage and a low 0.0026 Ohm typical on-resistance. This surface mount device offers a continuous drain current of 100A and a maximum power dissipation of 300W. Designed with a D2PAK package, it boasts fast switching characteristics with turn-on delay time of 35ns and fall time of 95ns. Operating across a wide temperature range from -55°C to 175°C, this RoHS compliant component is suitable for demanding applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | STripFET™ III |
| Polarity | N-CHANNEL |
| Fall Time | 95ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.2mR |
| Nominal Vgs | 1.7V |
| Package/Case | D2PAK |
| Current Rating | 100A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 6.2nF |
| Power Dissipation | 300W |
| Threshold Voltage | 1.7V |
| Turn-On Delay Time | 35ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 115ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.2mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3.2MR |
| Drain to Source Breakdown Voltage | 30V |
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