STB100NF04T4
Производится
Увеличить
Краткое описание:
N-Ch MOSFET 40V 120A 4.6mR D2PAK
Дополнительная информация
N-channel power MOSFET featuring 40V drain-source breakdown voltage and 120A continuous drain current. Offers a low 0.0043 Ohm typical on-state resistance. Designed for surface mounting in a D2PAK package, this component operates within a -55°C to 175°C temperature range with a maximum power dissipation of 300W. Key switching characteristics include a 35ns turn-on delay and 50ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | STripFET™ II |
| Polarity | N-CHANNEL |
| Fall Time | 50ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.6mR |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 5.1nF |
| Power Dissipation | 300W |
| Threshold Voltage | 2V |
| Turn-On Delay Time | 35ns |
| Dual Supply Voltage | 40V |
| On-State Resistance | 4.6mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 80ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.6mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 4.6mR |
| Drain to Source Breakdown Voltage | 40V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
