STB11N52K3
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Краткое описание:
525V 10A N-CH MOSFET, 510mR RdsOn, TO-263 D2PAK
Дополнительная информация
N-channel power MOSFET, TO-263 package, 525V drain-source breakdown voltage, 10A continuous drain current, and 0.51 ohm maximum drain-source on-resistance. Features include 125W power dissipation, 1.4nF input capacitance, and 3.75V threshold voltage. Operates from -55°C to 150°C with a 30V gate-source voltage rating. Surface mountable with tape and reel packaging.
| RoHS | Not CompliantNo |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.6mm |
| Length | 10.75mm |
| Series | SuperMESH3™ |
| Polarity | N-CHANNEL |
| Fall Time | 42ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 510mR |
| Package/Case | TO-263 |
| RoHS Compliant | No |
| Package Quantity | 1 |
| Input Capacitance | 1.4nF |
| Power Dissipation | 125W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 281ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 525V |
| Drain-source On Resistance-Max | 410MR |
| Drain to Source Breakdown Voltage | 525V |
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