STB11NM60FDT4
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Краткое описание:
600V 11A N-CH MOSFET, 450mR Rds On, D2PAK
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 11A continuous drain current. Offers a low 450mΩ maximum drain-source on-resistance. Designed for surface mounting in a D2PAK package, this component boasts a 160W maximum power dissipation and operates within a -65°C to 150°C temperature range. Includes fast switching characteristics with a 15ns fall time and 20ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | FDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 450mR |
| Package/Case | D2PAK |
| Current Rating | 11A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 1000 |
| Input Capacitance | 900pF |
| Power Dissipation | 160W |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Max Power Dissipation | 160W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 450mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 450mR |
| Drain to Source Breakdown Voltage | 600V |
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