STB11NM60T4
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Краткое описание:
600V 11A N-CH MOSFET D2PAK, 450mR Rds(on)
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 11A continuous drain current. Offers a low 0.4 Ohm typical drain-source on-resistance and 450mR maximum. Designed for surface mount applications in a D2PAK package, this component operates within a -65°C to 150°C temperature range with 160W maximum power dissipation. Key switching characteristics include 6ns turn-off delay and 11ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.6mm |
| Length | 10.75mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 450mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 1 |
| Input Capacitance | 1nF |
| Power Dissipation | 160W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 6ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 160W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 450mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 450MR |
| Drain to Source Breakdown Voltage | 600V |
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