STB120N4LF6
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Краткое описание:
N-Ch 40V 80A 4mR D2PAK Power MOSFET
Дополнительная информация
N-channel power MOSFET featuring 40V drain-source breakdown voltage and 80A continuous drain current. Offers low 4mΩ maximum drain-source on-resistance. Designed for surface mounting in a D2PAK package, this component boasts a maximum power dissipation of 110W and operates across a wide temperature range of -55°C to 175°C. Includes fast switching characteristics with a 15ns turn-on delay and 45ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.6mm |
| Length | 10.75mm |
| Series | DeepGATE™, STripFET™ VI |
| Polarity | N-CHANNEL |
| Fall Time | 45ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 4.3nF |
| Power Dissipation | 110W |
| Threshold Voltage | 1V |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 125ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 4MR |
| Drain to Source Breakdown Voltage | 40V |
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