STB120NF10T4
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Краткое описание:
100V 10.5mR N-CH MOSFET D2PAK 110A
Дополнительная информация
N-channel power MOSFET featuring 100V drain-source breakdown voltage and 110A continuous drain current. Offers low 9 mOhm typical on-state resistance at a nominal 4V gate-source voltage. Designed for surface mounting in a D2PAK package, this device boasts a maximum power dissipation of 312W and operates within a -55°C to 175°C temperature range. Includes fast switching characteristics with a 25ns turn-on delay and 68ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | STripFET™ II |
| Polarity | N-CHANNEL |
| Fall Time | 68ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 10.5mR |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Package/Case | D2PAK |
| Current Rating | 120A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 1000 |
| Input Capacitance | 5.2nF |
| Power Dissipation | 312W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 25ns |
| Dual Supply Voltage | 100V |
| On-State Resistance | 10.5mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 132ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 312W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 10.5mR |
| Drain to Source Breakdown Voltage | 100V |
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