STB14NK60ZT4
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Краткое описание:
600V N-CH MOSFET, 13.5A, 500mR RdsOn, D2PAK
Дополнительная информация
N-channel SuperMESH™ Power MOSFET featuring 600V drain-source breakdown voltage and 13.5A continuous drain current. Offers a low 0.45 Ohm typical on-resistance and 500mR maximum Rds On. Designed for surface mounting in a D2PAK package, this component boasts a 160W power dissipation and operates within a -55°C to 150°C temperature range. Includes fast switching characteristics with a 13ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.6mm |
| Length | 10.75mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 500mR |
| Nominal Vgs | 3.75V |
| Termination | SMD/SMT |
| Package/Case | D2PAK |
| Current Rating | 13.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 1 |
| Input Capacitance | 2.22nF |
| Power Dissipation | 160W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 26ns |
| Dual Supply Voltage | 600V |
| On-State Resistance | 500mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 62ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 160W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 500mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 13.5A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 500mR |
| Drain to Source Breakdown Voltage | 600V |
