STB150NF55T4
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Краткое описание:
55V 120A N-CH MOSFET D2PAK 6mR RdsOn
Дополнительная информация
N-channel MOSFET featuring 55V drain-source breakdown voltage and 120A continuous drain current. Offers a low 6mΩ drain-source on-resistance. Designed for surface mounting in a D2PAK package, this component boasts a maximum power dissipation of 300W and operates across a wide temperature range from -55°C to 175°C. Key switching parameters include a 35ns turn-on delay and 80ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 80ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6mR |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Package/Case | D2PAK |
| Current Rating | 120A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 55V |
| Package Quantity | 1000 |
| Input Capacitance | 4.4nF |
| Power Dissipation | 300W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 35ns |
| Dual Supply Voltage | 55V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 140ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 6mR |
| Drain to Source Breakdown Voltage | 55V |
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