STB160NF3LLT4
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Краткое описание:
160A 30V 3.3mR N-CH MOSFET D2PAK Power Transistor
Дополнительная информация
N-CHANNEL Power MOSFET, D2PAK package, featuring 30V drain-to-source breakdown voltage and 160A continuous drain current. Offers low on-resistance of 3.3mR (max) and 4.8mR (typical). Operates with a gate-to-source voltage up to 16V, exhibiting 5.5nF input capacitance. Maximum power dissipation is 300W, with operating temperatures from -55°C to 175°C. This surface mount component is RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | STripFET™ III |
| Polarity | N-CHANNEL |
| Fall Time | 120ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.3mR |
| Package/Case | D2PAK |
| Current Rating | 160A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1000 |
| Input Capacitance | 5.5nF |
| Power Dissipation | 300W |
| Turn-On Delay Time | 50ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 150ns |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.8mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 160A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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