STB16N65M5
Снят с производства
Увеличить
Краткое описание:
650V 12A N-CH MOSFET, D2PAK, 279mR Rds(on)
Дополнительная информация
N-channel power MOSFET with 650V drain-source breakdown voltage and 12A continuous drain current. Features low 279mΩ maximum drain-source on-resistance and 90W power dissipation. Operates from -55°C to 150°C, with fast switching speeds including 8ns fall time and 25ns turn-on delay. Packaged in a surface-mount D2PAK (TO-263AB) for efficient thermal management. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.6mm |
| Length | 10.75mm |
| Series | MDmesh™ V |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 299mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.25nF |
| Power Dissipation | 90W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 6ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 90W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 270mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 279mR |
| Drain to Source Breakdown Voltage | 650V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
