STB16NF06LT4
Производится
Увеличить
Краткое описание:
60V 16A N-CH MOSFET D2PAK 90mR Rds(on)
Дополнительная информация
N-channel Power MOSFET featuring 60V drain-source breakdown voltage and 16A continuous drain current. This device offers a low 0.07 Ohm typical drain-source on-resistance, with a maximum of 90mR. Designed for surface mounting in a D2PAK package, it operates across a wide temperature range from -55°C to 175°C and supports a maximum power dissipation of 45W. Key switching characteristics include a 10ns turn-on delay and 20ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.6mm |
| Length | 10.75mm |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 12.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 90mR |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Package/Case | D2PAK |
| Current Rating | 16A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1000 |
| Input Capacitance | 345pF |
| Power Dissipation | 45W |
| Threshold Voltage | 1V |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Dual Supply Voltage | 60V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 90MR |
| Drain to Source Breakdown Voltage | 60V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
