STB18N65M5
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Краткое описание:
650V 15A N-CH MOSFET D2PAK, 198mR RdsOn
Дополнительная информация
N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 15A continuous drain current. Offers low 198mΩ typical drain-source on-resistance and a maximum of 220mΩ. Designed for surface mounting in a D2PAK package, this component boasts a maximum power dissipation of 110W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 9ns fall time and 36ns turn-on delay time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | MDmesh™ V |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 220mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.24nF |
| Power Dissipation | 110W |
| Number of Elements | 1 |
| Turn-On Delay Time | 36ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 9ns |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 198mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 220mR |
| Drain to Source Breakdown Voltage | 650V |
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