STB18NM80
Производится
Увеличить
Краткое описание:
800V N-CH MOSFET, 17A, 295mR Rds On, D2PAK
Дополнительная информация
N-channel power MOSFET featuring 800V drain-source breakdown voltage and 17A continuous drain current. Offers a low 295mΩ maximum drain-source on-resistance and 190W power dissipation. Designed for surface mounting in a D2PAK package, this MDmesh™ series component boasts fast switching times with turn-on delay of 18ns and fall time of 50ns. Operates within a temperature range of -65°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.6mm |
| Length | 10.75mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 50ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 295mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.07nF |
| Power Dissipation | 190W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 96ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 190W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 295mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 295mR |
| Drain to Source Breakdown Voltage | 800V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
