SCT2080KE
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Краткое описание:
SiC MOSFET N-CH 1.2kV 40A TO-247
Дополнительная информация
N-channel Silicon Carbide (SiC) Power MOSFET, enhancement mode, single element, designed for through-hole mounting. Features a maximum drain-source voltage of 1200V and a continuous drain current of 40A. Housed in a TO-247 package with 3 pins and a tab, offering a maximum power dissipation of 262W. Operating temperature range from -55°C to 175°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Material | SiC |
| Mounting | Through Hole |
| Cage Code | S5518 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-247 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 5.45 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 5.03 |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-247 |
| Package Height (mm) | 20.95 |
| Package Length (mm) | 15.9 |
| Seated Plane Height (mm) | 25.27 |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 262000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ Vgs | 106@18VnC |
| Typical Output Capacitance | 77pF |
| Maximum Gate Source Voltage | 22V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 1200V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 117@18VmOhm |
| Typical Input Capacitance @ Vds | 2080@800VpF |
| Maximum Continuous Drain Current | 40A |
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