STB200NF04T4
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Краткое описание:
40V 120A N-CH MOSFET, 3.7mR Rds On, D2PAK, Power
Дополнительная информация
N-CHANNEL POWER MOSFET, D2PAK package, featuring 40V drain-source breakdown voltage and 120A continuous drain current. Offers a low 3.7mΩ maximum drain-source on-resistance. Designed for surface mounting with a maximum power dissipation of 310W and an operating temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay time of 30ns and fall time of 120ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 120ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.7mR |
| Package/Case | D2PAK |
| Current Rating | 120A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 40V |
| Package Quantity | 1 |
| Input Capacitance | 5.1nF |
| Power Dissipation | 310W |
| Turn-On Delay Time | 30ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 140ns |
| Max Power Dissipation | 310W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.7mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 3.7MR |
| Drain to Source Breakdown Voltage | 40V |
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