STB20NK50ZT4
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Краткое описание:
500V 17A N-CH MOSFET, 270mR, D2PAK, Power
Дополнительная информация
N-channel Power MOSFET, D2PAK package, featuring 500V drain-source breakdown voltage and 17A continuous drain current. Offers a low 270mΩ drain-source on-resistance at a nominal Vgs of 3.75V. Designed for surface mounting with a maximum power dissipation of 190W and operating temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 28ns and fall time of 15ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 270mR |
| Nominal Vgs | 3.75V |
| Package/Case | D2PAK |
| Current Rating | 17A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 1 |
| Input Capacitance | 2.6nF |
| Power Dissipation | 190W |
| Turn-On Delay Time | 28ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 27ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 190W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 270mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 270mR |
| Drain to Source Breakdown Voltage | 500V |
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