STB21NM60ND
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Краткое описание:
600V 17A N-CH MOSFET D2PAK, 170mR Rds(on)
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 17A continuous drain current. Offers low 0.17 Ohm typical drain-source on-resistance and 140W maximum power dissipation. Integrated fast diode and FDmesh™ II technology enhance performance. Surface mount D2PAK package with 4.6mm height, 10.75mm length, and 10.4mm width. RoHS compliant with a maximum operating temperature of 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.6mm |
| Length | 10.75mm |
| Series | FDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 48ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 220mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.8nF |
| Power Dissipation | 140W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 140W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 220mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 170mR |
| Drain to Source Breakdown Voltage | 600V |
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