STB25NM60N
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Краткое описание:
600V 20A N-Channel Power MOSFET D2PAK
Дополнительная информация
N-channel power MOSFET featuring 600V drain-source breakdown voltage and 20A continuous drain current. This surface-mount device offers a low 160mΩ maximum drain-source on-resistance. With a 160W power dissipation and a D2PAK package, it is suitable for demanding applications. RoHS compliant and designed for efficient switching with a typical fall time of 24ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 24ns |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Rds On Max | 160mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | D2PAK |
| Current Rating | 20A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 1 |
| Input Capacitance | 2.4nF |
| Power Dissipation | 160W |
| Dual Supply Voltage | 600V |
| On-State Resistance | 170mR |
| Turn-Off Delay Time | 94ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 160W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 140mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 160mR |
| Drain to Source Breakdown Voltage | 600V |
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