STB25NM60ND
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Краткое описание:
600V 21A N-CH MOSFET D2PAK, 160mR RdsOn
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 21A continuous drain current. Offers a low 0.13 Ohm typical drain-source on-resistance and 160W maximum power dissipation. Designed for surface mounting in a D2PAK package, this component boasts fast switching speeds with turn-on delay of 60ns and fall time of 40ns. Operating temperature range is -55°C to 150°C, with RoHS compliance.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.6mm |
| Length | 10.75mm |
| Series | FDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 160mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.4nF |
| Power Dissipation | 160W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 60ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 160W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 160mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 160mR |
| Drain to Source Breakdown Voltage | 600V |
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