STB28NM50N
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Краткое описание:
500V N-CH MOSFET, 21A, 135mR RdsOn, D2PAK
Дополнительная информация
N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 21A continuous drain current. This surface-mount device offers a low 135mΩ typical drain-source on-resistance and 150W maximum power dissipation. Designed for efficient switching, it exhibits a 13.6ns turn-on delay and 52ns fall time. The component is housed in a TO-263 package, is RoHS compliant, and operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.6mm |
| Length | 10.75mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 52ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 158mR |
| Package/Case | TO-263 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.735nF |
| Power Dissipation | 150W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 13.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 62ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 150W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 158mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 135mR |
| Drain to Source Breakdown Voltage | 500V |
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