STB300NH02L

Снят с производства
STB300NH02L - Stmicroelectronics
Увеличить
Краткое описание: N-CH MOSFET, 120A, 24V, 1.8mR, 300W, D2PAK
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-CHANNEL POWER MOSFET, D2PAK package, featuring 24V drain-source breakdown voltage and 120A continuous drain current. Offers a low 1.8mR drain-source on-resistance. Maximum power dissipation is 300W, with operating temperatures from -55°C to 175°C. Surface mount termination with tape and reel packaging. RoHS compliant.
RoHS Compliant
Mount Surface Mount
Series STripFET™
Polarity N-CHANNEL
Fall Time 94.4ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 1.8mR
Nominal Vgs 2V
Termination SMD/SMT
Package/Case D2PAK
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 7.055nF
Power Dissipation 300W
Threshold Voltage 2V
Number of Elements 1
Dual Supply Voltage 24V
Turn-Off Delay Time 138ns
Reach SVHC Compliant No
Max Power Dissipation 300W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 1.8mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 120A
Drain to Source Voltage (Vdss) 24V
Drain-source On Resistance-Max 1.8MR
Drain to Source Breakdown Voltage 24V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.