STB30NF20
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Краткое описание:
200V 30A N-CH MOSFET D2PAK 65mR RdsOn
Дополнительная информация
N-channel Power MOSFET featuring 200V drain-source breakdown voltage and 30A continuous drain current. Offers a low 65mΩ maximum drain-source on-resistance at a nominal 3V gate-source voltage. Designed for surface mounting in a D2PAK package, this component boasts a 125W maximum power dissipation and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 35ns turn-on delay and 8.8ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 8.8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 75mR |
| Nominal Vgs | 3V |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.597nF |
| Power Dissipation | 125W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 35ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 38ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 75mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 65mR |
| Drain to Source Breakdown Voltage | 200V |
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