STB36NF06LT4
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Краткое описание:
N-Ch MOSFET, 60V, 30A, 40mR RdsOn, D2PAK
Дополнительная информация
N-channel power MOSFET featuring 60V drain-source breakdown voltage and 30A continuous drain current. Offers low 40mΩ drain-source on-resistance and 70W power dissipation. Surface mount D2PAK package with fast switching times including 10ns turn-on delay and 13ns fall time. Operates across a wide temperature range from -55°C to 175°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | STripFET™ II |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 40mR |
| Package/Case | D2PAK |
| Current Rating | 30A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Input Capacitance | 660pF |
| Power Dissipation | 70W |
| Threshold Voltage | 1V |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 40mR |
| Gate to Source Voltage (Vgs) | 18V |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 40mR |
| Drain to Source Breakdown Voltage | 60V |
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