STB3NK60ZT4
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Краткое описание:
600V N-CH MOSFET, 2.4A, 3.6 Ohm, D2PAK, SuperMESH
Дополнительная информация
N-channel SuperMESH™ PowerMOSFET featuring 600V drain-source breakdown voltage and 2.4A continuous drain current. This surface-mount device offers a low 3.6 Ohm (max) drain-source resistance and 45W power dissipation. Key switching characteristics include a 9ns turn-on delay and 14ns fall time. Packaged in a D2PAK for efficient thermal management, it operates from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.6mm |
| Length | 10.75mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 14ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.6R |
| Package/Case | D2PAK |
| Current Rating | 2.4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 1000 |
| Input Capacitance | 311pF |
| Power Dissipation | 45W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.6R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2.4A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
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