STB40NF10LT4

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STB40NF10LT4 - Stmicroelectronics
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Краткое описание: 100V 40A N-CH MOSFET D2PAK, 33mR RdsOn
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel MOSFET featuring 100V drain-source breakdown voltage and 40A continuous drain current. Offers low 33mΩ maximum drain-source on-resistance and 2.3nF input capacitance. Designed for surface mounting in a D2PAK package, this component boasts a 150W maximum power dissipation and operates across a wide temperature range of -65°C to 175°C. Key switching characteristics include a 25ns turn-on delay and 64ns turn-off delay.
RoHS Compliant
Mount Surface Mount
Width 9.35mm
Height 4.6mm
Length 10.4mm
Series STripFET™
Polarity N-CHANNEL
Fall Time 24ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 33mR
Package/Case D2PAK
Current Rating 40A
RoHS Compliant Yes
DC Rated Voltage 100V
Package Quantity 1
Input Capacitance 2.3nF
Power Dissipation 150W
Threshold Voltage 1.7V
Number of Elements 1
Turn-On Delay Time 25ns
Radiation Hardening No
Turn-Off Delay Time 64ns
Reach SVHC Compliant No
Max Power Dissipation 150W
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Drain to Source Resistance 30mR
Gate to Source Voltage (Vgs) 15V
Continuous Drain Current (ID) 40A
Drain to Source Voltage (Vdss) 100V
Drain-source On Resistance-Max 33mR
Drain to Source Breakdown Voltage 100V

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