STB40NF10T4
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Краткое описание:
100V 50A N-CH MOSFET D2PAK Low Gate Charge
Дополнительная информация
N-Channel MOSFET featuring 100V drain-source breakdown voltage and 50A continuous drain current. Offers low 24mΩ drain-source on-resistance at Vgs=10V, with a maximum of 28mΩ. Designed for surface mounting in a D2PAK package, this component boasts low gate charge and a maximum power dissipation of 150W. Operating temperature range spans from -50°C to 175°C, with a threshold voltage of 2.8V.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.6mm |
| Length | 10.75mm |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 28ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 28mR |
| Package/Case | D2PAK |
| Current Rating | 50A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 1 |
| Input Capacitance | 1.78nF |
| Power Dissipation | 150W |
| Threshold Voltage | 2.8V |
| Number of Elements | 1 |
| Turn-On Delay Time | 28ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 84ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 150W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -50°C |
| Drain to Source Resistance | 24mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 28mR |
| Drain to Source Breakdown Voltage | 100V |
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