STB40NF20

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STB40NF20 - Stmicroelectronics
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Краткое описание: 200V 40A N-Channel MOSFET D2PAK 45mR RdsOn
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel MOSFET featuring 200V drain-source breakdown voltage and 40A continuous drain current. Offers low 45mΩ drain-source on-resistance at 10Vgs. Designed for surface mount applications with a D2PAK package, this component boasts a maximum power dissipation of 160W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 20ns turn-on delay and 22ns fall time.
RoHS Compliant
Mount Surface Mount
Width 9.35mm
Height 4.6mm
Length 10.4mm
Series STripFET™
Polarity N-CHANNEL
Fall Time 22ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 45mR
Package/Case D2PAK
Current Rating 40A
RoHS Compliant Yes
DC Rated Voltage 200V
Package Quantity 1
Input Capacitance 2.5nF
Power Dissipation 160W
Threshold Voltage 3V
Number of Elements 1
Turn-On Delay Time 20ns
Radiation Hardening No
Turn-Off Delay Time 74ns
Reach SVHC Compliant No
Max Power Dissipation 160W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 45mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 40A
Drain to Source Voltage (Vdss) 200V
Drain-source On Resistance-Max 45mR
Drain to Source Breakdown Voltage 200V

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