STB4NK60Z-1
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Краткое описание:
N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in I2PAK package
Дополнительная информация
N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in I2PAK package
| RoHS | Compliant |
| Mount | Through Hole |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 16.5ns |
| Packaging | Rail/Tube |
| Rds On Max | 2R |
| Package/Case | TO-262-3 |
| RoHS Compliant | Yes |
| Input Capacitance | 510pF |
| Power Dissipation | 70W |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 29ns |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
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