STB50N25M5
Снят с производства
Увеличить
Краткое описание:
250V 28A N-CH MOSFET D2PAK 65mR Power TO-263
Дополнительная информация
N-CHANNEL Power MOSFET, D2PAK package, offering 250V drain-source breakdown voltage and 28A continuous drain current. Features a low 65mΩ drain-source on-resistance, 110W maximum power dissipation, and 25V gate-source voltage rating. Operates across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with typical turn-on delay of 16ns and turn-off delay of 35ns. This surface-mount component is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.6mm |
| Length | 10.75mm |
| Series | MDmesh™ V |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 65mR |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.7nF |
| Power Dissipation | 110W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 16ns |
| Dual Supply Voltage | 250V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 65mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 65mR |
| Drain to Source Breakdown Voltage | 250V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
