STB5NK50ZT4
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Краткое описание:
500V N-CH MOSFET, 4.4A, 1.5R RdsOn, D2PAK
Дополнительная информация
N-channel SuperMESH™ Power MOSFET featuring 500V drain-source breakdown voltage and 4.4A continuous drain current. This surface-mount device in a D2PAK package offers a low 1.22 Ohm typical drain-source on-resistance. Key specifications include a 70W power dissipation, 30V gate-source voltage, and fast switching times with 15ns turn-on and 32ns turn-off delays. It operates from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.6mm |
| Length | 10.75mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.5R |
| Package/Case | D2PAK |
| Current Rating | 4.4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 1 |
| Input Capacitance | 535pF |
| Power Dissipation | 70W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 32ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
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