STB60NF06LT4
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Краткое описание:
60V 60A N-CH MOSFET D2PAK, 14mR Rds(on)
Дополнительная информация
Automotive-grade N-channel power MOSFET featuring 60V drain-source breakdown voltage and 60A continuous drain current. This STripFET™ II device offers a low 14mΩ typical drain-source on-resistance and 110W maximum power dissipation. Packaged in a surface-mount D2PAK, it operates from -65°C to 175°C and includes fast switching characteristics with a 30ns fall time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | STripFET™ II |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 14mR |
| Package/Case | D2PAK |
| Current Rating | 60A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Input Capacitance | 2nF |
| Power Dissipation | 110W |
| Threshold Voltage | 1V |
| Turn-On Delay Time | 35ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 55ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 14mR |
| Gate to Source Voltage (Vgs) | 15V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 16mR |
| Drain to Source Breakdown Voltage | 60V |
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