STB60NF10T4
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Краткое описание:
N-Ch MOSFET 100V 80A 23mR D2PAK SMD
Дополнительная информация
N-channel MOSFET featuring 100V drain-source breakdown voltage and 80A continuous drain current. This surface-mount component offers a low 23mΩ drain-source on-resistance and a maximum power dissipation of 300W. It operates within a temperature range of -55°C to 175°C and is packaged in a D2PAK for efficient thermal management. Key switching characteristics include a 17ns turn-on delay and 82ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.6mm |
| Length | 10.75mm |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 23ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 23mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | D2PAK |
| Current Rating | 80A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 1 |
| Input Capacitance | 4.27nF |
| Power Dissipation | 300W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 17ns |
| Dual Supply Voltage | 100V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 82ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 23mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 23mR |
| Drain to Source Breakdown Voltage | 100V |
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