STB6N62K3
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Краткое описание:
MOSFET N-CH 620V 5.5A D2PAK 950mR
Дополнительная информация
N-channel MOSFET with 620V drain-source breakdown voltage and 5.5A continuous drain current. Features a 950mΩ drain-source on-resistance at 5.5A and 950mΩ at 5.5A. Surface-mount D2PAK package with 90W maximum power dissipation. Operates from -55°C to 150°C, with typical turn-on delay of 22ns and fall time of 20ns.
| RoHS | Not CompliantNo |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.6mm |
| Length | 10.75mm |
| Series | SuperMESH3™ |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.2R |
| Nominal Vgs | 3.75V |
| Package/Case | D2PAK |
| Input Capacitance | 875pF |
| Power Dissipation | 90W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 22ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 49ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 90W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 950mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Voltage (Vdss) | 620V |
| Drain-source On Resistance-Max | 1.2R |
| Drain to Source Breakdown Voltage | 620V |
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