STB76NF75

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STB76NF75 - Stmicroelectronics
Краткое описание: 75V 80A N-CH Power MOSFET D2PAK SMT
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET, 75V drain-source voltage, 80A continuous drain current, and 11 mOhm maximum drain-source resistance at 10V. Features a D2PAK (TO-263) surface-mount package with gull-wing leads, a single element configuration, and a maximum power dissipation of 300W. Operates from -55°C to 175°C.
PCB 2
Tab Tab
ECCN EAR99
EU RoHS Yes with Exemption
Category Power MOSFET
HTS Code 8541290095
Mounting Surface Mount
Cage Code SCR76
Pin Count 3
Automotive Yes
Lead Shape Gull-wing
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case D2PAK
AEC Qualified Yes
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 2.54
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 9.35(Max)
Package Description Double Deca Watt Package
Package Family Name TO-263
Package Height (mm) 4.6(Max)
Package Length (mm) 10.4(Max)
Radiation Hardening No
Seated Plane Height (mm) 4.83(Max)
Max Operating Temperature 175°C
Maximum Power Dissipation 300000mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 117nC
Typical Gate Charge @ Vgs 117@10VnC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 75V
Maximum Drain Source Resistance 11@10VmOhm
Typical Input Capacitance @ Vds 3700@25VpF
Maximum Continuous Drain Current 80A

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