STB76NF80
Снят с производства
Увеличить
Краткое описание:
80V 80A N-CH MOSFET D2PAK 11mR Power TO-263
Дополнительная информация
N-channel power MOSFET featuring 80V drain-source breakdown voltage and 80A continuous drain current. This surface-mount device, housed in a D2PAK package, offers a low 11mΩ maximum drain-source on-resistance. Key switching characteristics include a 25ns turn-on delay and 30ns fall time, with a 3.7nF input capacitance. Maximum power dissipation is rated at 300W, operating across a temperature range of -55°C to 175°C.
| RoHS | Not CompliantNo |
| Mount | Surface Mount |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 11mR |
| Nominal Vgs | 3V |
| Package/Case | D2PAK |
| RoHS Compliant | No |
| Package Quantity | 1 |
| Input Capacitance | 3.7nF |
| Power Dissipation | 300W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 66ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 80V |
| Drain-source On Resistance-Max | 9.5mR |
| Drain to Source Breakdown Voltage | 80V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
