STB80NF03L-04T4
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Краткое описание:
30V 80A N-Ch MOSFET D2PAK 4mR RdsOn
Дополнительная информация
N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and 80A continuous drain current. This surface-mount device offers a low 4mΩ maximum drain-source on-resistance. Operating across a wide temperature range from -60°C to 175°C, it boasts a 300W maximum power dissipation. Packaged in a D2PAK, this RoHS compliant component is ideal for demanding power applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | STripFET™ II |
| Polarity | N-CHANNEL |
| Fall Time | 95ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4mR |
| Package/Case | D2PAK |
| Current Rating | 80A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1000 |
| Input Capacitance | 5.5nF |
| Power Dissipation | 300W |
| Number of Elements | 1 |
| Turn-On Delay Time | 30ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 110ns |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -60°C |
| Drain to Source Resistance | 4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 4mR |
| Drain to Source Breakdown Voltage | 30V |
