STB80NF10T4
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Краткое описание:
100V 80A N-CH MOSFET D2PAK 15mR Rds(on)
Дополнительная информация
N-Channel MOSFET featuring 100V drain-source breakdown voltage and 80A continuous drain current. This surface-mount device offers a low 15mΩ maximum drain-source on-resistance and 300W power dissipation. It boasts a low gate charge for efficient switching, with turn-on delay time of 26ns and fall time of 60ns. Operating across a wide temperature range of -55°C to 175°C, this RoHS compliant component is supplied in a D2PAK package on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 60ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 15mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | D2PAK |
| Current Rating | 80A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 1 |
| Input Capacitance | 5.5nF |
| Power Dissipation | 300W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 26ns |
| Dual Supply Voltage | 100V |
| Turn-Off Delay Time | 116ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 15mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 15mR |
| Drain to Source Breakdown Voltage | 100V |
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