STB80NF55-08T4
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Краткое описание:
N-CH MOSFET, 55V, 80A, 8mR, D2PAK, SM
Дополнительная информация
N-channel power MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. This surface-mount device offers a low 8mΩ maximum drain-source on-resistance and 300W power dissipation. Operating across a -55°C to 175°C temperature range, it includes a 3V threshold voltage and 3.85nF input capacitance. Packaged in a D2PAK for efficient thermal management, this RoHS compliant component is ideal for high-current switching applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8mR |
| Package/Case | D2PAK |
| Current Rating | 80A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 55V |
| Package Quantity | 1 |
| Input Capacitance | 3.85nF |
| Power Dissipation | 300W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 75ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 8mR |
| Drain to Source Breakdown Voltage | 55V |
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