STB80PF55T4
Снят с производства
Увеличить
Краткое описание:
55V P-CH MOSFET, 80A, 18mR, D2PAK, Power
Дополнительная информация
P-channel Power MOSFET featuring 80A continuous drain current and a -55V drain-to-source breakdown voltage. This surface-mount device offers a low 18mΩ drain-source on-resistance and a maximum power dissipation of 300W. Operating across a wide temperature range from -55°C to 175°C, it is packaged in a D2PAK for efficient thermal management. The component is RoHS compliant and designed for high-current switching applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | STripFET™ II |
| Polarity | P-CHANNEL |
| Fall Time | 80ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 18mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | D2PAK |
| Current Rating | -300mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 1 |
| Input Capacitance | 5.5nF |
| Power Dissipation | 300W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 35ns |
| Dual Supply Voltage | 55V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 165ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 16mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 18mR |
| Drain to Source Breakdown Voltage | -55V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
