STB85NF3LLT4
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Краткое описание:
30V 85A N-CH MOSFET, 8mR RdsOn, D2PAK, Power
Дополнительная информация
N-CHANNEL Power MOSFET, D2PAK package, featuring 30V Drain to Source Breakdown Voltage and 85A Continuous Drain Current. Offers low 8mΩ maximum Drain-Source On-Resistance and 110W Power Dissipation. Designed for surface mount applications with a wide operating temperature range of -65°C to 175°C. Includes fast switching characteristics with a 22ns turn-on delay and 36.5ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 36.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8mR |
| Package/Case | D2PAK |
| Current Rating | 85A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 2.21nF |
| Power Dissipation | 110W |
| Turn-On Delay Time | 22ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 36.5ns |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 7.5mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 85A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 8mR |
| Drain to Source Breakdown Voltage | 30V |
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